OCTOMAG series

Magnetron sputtering is PVD process when a target is bombarded by energetic ions (Ar+) generated in glow discharge plasma, situated in front of the target. The bombardment process causes the removal of target atoms, which may then condense on a substrate as a thin film. Level of ionization of sputtered atoms is low (up to 10%). In contrast to cathodic ARC evaporation, droplets do not form during sputtering, surface of the coatings is smooth. Deposition rate is lower.

The HIPIMS power supply operates at average power comparable to direct current (DC) or middle frequency (MF) power supplies but the discharge is pulsed with a low duty cycle, resulting in peak power and current up to some megawatts or some kiloamperes, respectively.

The high peak power or current densities at the cathode are required to get a significant amount of target material ionized. During ion cleaning, ions from targets are accelerated by applying of negative high substrate bias (1kV) on the substrate and are implanted a few nanometers under the surface. It leads to significant improvement of adhesion also at low deposition temperatures. Furthermore, the ionized target material results in a significant modification or improvement of the properties of the growing films regarding film density, hardness, roughness, etc.